JPS614196B2 - - Google Patents
Info
- Publication number
- JPS614196B2 JPS614196B2 JP50070829A JP7082975A JPS614196B2 JP S614196 B2 JPS614196 B2 JP S614196B2 JP 50070829 A JP50070829 A JP 50070829A JP 7082975 A JP7082975 A JP 7082975A JP S614196 B2 JPS614196 B2 JP S614196B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/512—Disposition of the gate electrodes, e.g. buried gates
- H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/117—Shapes of semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/149—Source or drain regions of field-effect devices
- H10D62/151—Source or drain regions of field-effect devices of IGFETs
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50070829A JPS51147269A (en) | 1975-06-13 | 1975-06-13 | Field effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50070829A JPS51147269A (en) | 1975-06-13 | 1975-06-13 | Field effect transistor |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59257581A Division JPS60157261A (ja) | 1984-12-07 | 1984-12-07 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS51147269A JPS51147269A (en) | 1976-12-17 |
| JPS614196B2 true JPS614196B2 (en]) | 1986-02-07 |
Family
ID=13442846
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50070829A Granted JPS51147269A (en) | 1975-06-13 | 1975-06-13 | Field effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS51147269A (en]) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0356060U (en]) * | 1989-09-27 | 1991-05-29 | ||
| JPH0463985U (en]) * | 1990-10-05 | 1992-06-01 |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5710973A (en) * | 1980-06-24 | 1982-01-20 | Agency Of Ind Science & Technol | Semiconductor device |
| JPS57192080A (en) * | 1981-05-21 | 1982-11-26 | Fujitsu Ltd | Semiconductor device |
| JPS6359349U (en]) * | 1986-10-07 | 1988-04-20 | ||
| JPH02248046A (ja) * | 1989-03-22 | 1990-10-03 | Nec Corp | ＳｉＯ↓２膜の形成方法 |
| JP2006278674A (ja) * | 2005-03-29 | 2006-10-12 | Nec Electronics Corp | 電界効果トランジスタとその製造方法、及び半導体装置 |
| JP2009081397A (ja) | 2007-09-27 | 2009-04-16 | Fuji Electric Device Technology Co Ltd | 半導体装置および半導体装置の製造方法 |
| JP5662865B2 (ja) | 2010-05-19 | 2015-02-04 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| JP5466577B2 (ja) | 2010-05-24 | 2014-04-09 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
-
1975
- 1975-06-13 JP JP50070829A patent/JPS51147269A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0356060U (en]) * | 1989-09-27 | 1991-05-29 | ||
| JPH0463985U (en]) * | 1990-10-05 | 1992-06-01 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS51147269A (en) | 1976-12-17 |